tic116 series silicon controlled rectifiers
1 april 1971 - revised september 2002 specifications are subject to change without notice. 8 a continuous on-state current 80 a surge-current glass passivated wafer 400 v to 800 v off-state voltage max i gt of 20 ma absolute maximum ratings over operating case temperature (unless otherwise noted) notes: 1. these values apply for continuous dc operation with resistive load. above 70c derate linearly to zero at 110c. 2. this value may be applied continuously under single phase 50 hz half-sine-wave operation with r esistive load. above 70c derate linearly to zero at 110c. 3. this value applies for one 50 hz half-sine-wave when the device is operating at (or below) the rated value of peak reve rse volta ge and on-state current. surge may be repeated after the device has returned to original ther mal eq uilibrium. 4. this value applies for a maxi mum averaging time of 20 ms. rating symbol value unit repetitive peak off-state voltage tic116d TIC116M tic116s tic116n v drm 400 600 700 800 v repetitive peak reverse voltage tic116d TIC116M tic116s tic116n v rrm 400 600 700 800 v continuous on-state current at (or below) 70c case temperature (see note 1) i t(rms) 8 a average on-state current (180 conduction angle) at (or below) 70c case temperature (see note 2) i t(av) 5 a surge on-state current at (or below) 25c case temperature (see note 3) i tm 80 a peak positive gate current (pulse width 300 s) i gm 3 a peak gate power dissipation (pulse width 300 s) p gm 5 w average gate power dissipation (see note 4) p g(av) 1 w operating case temperature range t c -40 to +110 c storage temperature range t stg -40 to +125 c lead temperature 1.6 mm from case for 10 seconds t l 230 c k a g to-220 package (top view) pin 2 is in electrical contact with the mounting base. mdc1aca 1 2 3
tic116 series silicon controlled rectifiers 2
april 1971 - revised september 2002 specifications are subject to change without notice. note 5: this parameter must be measured using pulse techniques, t p = 300 s, duty cycle 2 %. voltage sensing-contacts, separate from the current carrying contacts, are located within 3.2 mm from the device body. electrical characteristics at 25c case temperature (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off-state current v d = rated v drm t c = 110c 2 ma i rrm repetitive peak reverse current v r = rated v rrm i g = 0 t c = 110c 2 ma i gt gate trigger current v aa = 12 v r l = 100 ? t p(g) 20 s 8 20 ma v gt gate trigger voltage v aa = 12 v t p(g) 20 s r l = 100 ? t c = - 40c 2.5 v v aa = 12 v t p(g) 20 s r l = 100 ? 0.8 1.5 v aa = 12 v t p(g) 20 s r l = 100 ? t c = 110c 0.2 i h holding current v aa = 12 v initiating i t = 100 ma t c = - 40c 100 ma v aa = 12 v initiating i t = 100 ma 40 v t on-state voltage i t =8a (see note 5) 1.7 v dv/dt critical rate of rise of off-state voltage v d = rated v d i g = 0 t c = 110c 400 v/s thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 3 c/w r ja junction to free air thermal resist ance 62.5 c/w
tic116 series silicon controlled rectifiers 3
april 1971 - revised september 2002 specifications are subject to change without notice. thermal information figure 1. figure 2. figure 3. figure 4. average on-state current t c - case temperature - c 30 40 50 60 70 80 90 100 110 i t(av) - maximum average on-state current - a 0 2 4 6 8 10 12 14 16 ti03aa derating curve continuous dc conduction angle 0 180 = 180 max anode power loss i t - continuous on-state current - a 01 1 10 100 p a - max continuous anode power dissipated- w 01 1 10 100 ti03ab on-state current vs t j = 110c surge on-state current consecutive 50 hz half-sine-wave cycles 110100 i tm - peak half-sine-wave current - a 1 10 100 ti03ac cycles of current duration vs t c 70c no prior device conduction gate control guaranteed transient thermal resistance consecutive 50 hz half-sine-wave cycles 110100 r jc(t) - transient thermal resistance - c/w 01 1 10 ti03ad cycles of current duration vs
tic116 series silicon controlled rectifiers 4
april 1971 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 5. figure 6. figure 7. figure 8. gate trigger current t c - case temperature - c -50-25 0 255075100125 i gt - gate trigger current - ma 1 10 tc03aa case temperature vs v aa =12 v r l = 100 ? t p(g) 20 s g ate tri gg er v o lta g e t c - case temperature - c -50-25 0 255075100125 v gt - gate trigger voltage - v 0 02 04 06 08 1 tc03ab case temperature vs v aa =12 v r l = 100 ? t p(g) 20 s holding current t c - case temperature - c -50-250 255075100125 i h - holding current - ma 1 10 100 tc03ad case temperature vs v aa = 12 v initiating i t = 100 ma peak on-state voltage i tm - peak on-state current - a 01 1 10 100 v tm - peak on-state voltage - v 0 05 1 15 2 25 tc03ae vs peak on-state current t c = 25 c t p = 300 s duty cycle 2 %
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